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| 2.0-13.0 GHz 1.2 W Power Amplifier MAAPGM0057-DIE RO-P-DS-3089 A Preliminary Information Features 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAGTM Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAPGM0057-DIE is a single-stage distributed power amplifier with an on chip bias network. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications SatCom Test Instrumentation Military EW/ECM UltraWideband (UWB) Point-to-Point Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 10V, IDQ 510 mA2, Pin = 25 dBm Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure 1. 2. TB = MMIC Base Temperature Adjust VGG between -2.5 to -1.4 V. Symbol f POUT P1dB G VSWR VSWR IGG IDD NF Typical 2.0-13.0 31 30 7 2.2:1 2.2:1 < 5.0 < 900 8 mA mA dB Units GHz dBm dBm dB 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-13.0 GHz 1.2 W Power Amplifier Maximum Operating Conditions 3 Parameter Input Power Gate Supply Voltage Drain Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Die Attach Temperature Symbol PIN VGG VDD IDQ PDISS TJ TSTG Absolute Maximum 27.0 -3.5 +12.0 810 6.1 180 -55 to +150 310 MAAPGM0057-DIE RO-P-DS-3089 A Preliminary Information Units dBm V V mA W C C C 3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Gate Supply Voltage Drain Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VGG VDD PIN TJ JC TB 15 Note 4 Min -2.5 4.0 Typ -2 10.0 25.0 Max -1.4 10.0 27.0 150 Unit V V dBm C C/W C 4. Maximum MMIC Base Temperature = 150C --JC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10 V. 3. Adjust VGG to set IDQ, (approximately @ -2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.82982 Visit www.macom.com for additional data sheets and product information. 2.0-13.0 GHz 1.2 W Power Amplifier MAAPGM0057-DIE RO-P-DS-3089 A Preliminary Information 50 45 40 5V 8V 10V 50 45 40 Output Power (dBm) 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 Output Power (dBm) 35 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 5V 8V 10V Frequency (GHz) Figure 1. 1dB Compression Point vs. Frequency and Drain Voltage at 25% IDSS. Frequency (GHz) Figure 2. Saturated Output Power vs. Frequency and Drain Voltage at 25% IDSS. 10 9 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 SSG Input VSWR Output VSWR 6.0 5.5 5.0 4.5 4.0 10 9 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 5V 8V 10V Gain (dB) 3.5 3.0 2.5 2.0 1.5 1.0 Frequency (GHz) Figure 3. Small Signal Gain and Input and Output VSWR at VD=8V. Gain (dB) VSWR Frequency (GHz) Figure 4. Small Signal Gain vs. Frequency and Drain Voltage. 10 9 8 7 Noise Figure (dB) 6 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 4V 5V 6V Frequency (GHz) Figure 5. Noise Figure vs. Frequency and Drain Voltage. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-13.0 GHz 1.2 W Power Amplifier MAAPGM0057-DIE RO-P-DS-3089 A Preliminary Information 40 38 36 34 32 5V 8V 10V 1.00 0.90 0.80 0.70 5V 8V 10V Output Power (dBm) 28 26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Drain Current (A) 30 0.60 0.50 0.40 0.30 0.20 0.10 0.00 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Input Power (dBm) Figure 6. Output Power vs. Input Power and Drain Voltage at 3 GHz. Input Power (dBm) Figure 7. Drain Current vs. Input Power and Drain Voltage at 3 GHz. 40 38 36 34 32 5V 8V 10V 1.00 0.90 0.80 0.70 5V 8V 10V Output Power (dBm) 28 26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Drain Current (A) 30 0.60 0.50 0.40 0.30 0.20 0.10 0.00 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Input Power (dBm) Figure 8. Output Power vs. Input Power and Drain Voltage at 8 GHz. Input Power (dBm) Figure 9. Drain Current vs. Input Power and Drain Voltage at 8 GHz. 40 38 36 34 32 5V 8V 10V 1.00 0.90 0.80 0.70 5V 8V 10V Output Power (dBm) 28 26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Drain Current (A) 30 0.60 0.50 0.40 0.30 0.20 0.10 0.00 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Input Power (dBm) Figure 10. Output Power vs. Input Power and Drain Voltage at 12 GHz. Input Power (dBm) Figure 11. Drain Current vs. Input Power and Drain Voltage at 12 GHz. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-13.0 GHz 1.2 W Power Amplifier MAAPGM0057-DIE RO-P-DS-3089 A Preliminary Information Mechanical Information Chip Size: 4.46 x 4.46 x 0.075 mm 0.202mm. G ND: G (176 x 176 x 3 mils) 4.280mm. 4.457mm. 2.404mm. 4.461mm. 4.246mm. GND :G G N D:G G N D:G GND: G VD VD GND :G V G_T VGT 4.284mm. i d = 25 i d = 10 8 GND: G GND: G GND: G GND: G GN D:G GN D:G GN D:G GND: G GND: G W = 20 S= 8 GND:G GND:G GND: G GND: G GND: G GN D:G GN D:G GN D:G GN D:G GND: G GND:G GND :G W =8 S =8 GND :G GND :G GND :G 2.230mm. GND:G GND :G GND :G GND :G OUT IN 2.230mm. GND:G GN D:G GN D:G 0.214mm. 0 0 G ND: G GND: G Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad RF In and Out Gate Supply Voltage VGT Gate Supply Voltage VGB Drain Supply Voltage VDD Size (m) 100 x 150 100 x 100 150 x 150 150 x 150 Size (mils) 4x6 4x4 6x6 6x6 GN D:G GN D:G GND:G GND: G GND: G GND: G GN D:G GN D:G GN D:G GN D:G GND: G GND:G GND: G GND: G GND: G GND: G GN D:G GN D:G GN D:G GND: G GND: G GND:G d = 1 08 S =8 W = 20 i d= 25 S= 8 W= 8 i VG_B VGB G ND:G GND: G GN D:G GND :G Figure 12. Die Layout GND: G 4.257mm. 2.408mm. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-13.0 GHz 1.2 W Power Amplifier MAAPGM0057-DIE RO-P-DS-3089 A Preliminary Information VDD 0.1 F 100 pF 100 pF G N D: G G ND :G G N D: G VD VD GND:G VG_T VGT G N D:G G ND :G G N D :G i d =2 5 i d = 10 8 GND:G GND: G G ND: G G ND: G G ND: G G ND: G G ND: G G ND:G GND:G W = 20 S =8 G ND: G GND:G GND: G G ND: G G ND: G G ND: G G ND: G G ND:G G ND:G GND:G G ND: G G ND :G W =8 S= 8 G ND :G G ND :G G ND :G RFIN G ND: G IN RFOUT G ND: G O UT G ND: G G ND: G G N D :G G N D :G GN D :G G N D:G Figure 13. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testAssembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. G N D:G G N D:G GND:G GND: G G ND: G G ND: G G ND: G G ND: G G ND:G G ND:G GND:G G ND: G VGG G ND: G GND:G GND: G G ND: G G ND: G G ND: G G ND: G G ND: G G ND:G GND:G 0.1 F d = 108 S =8 W = 20 i d = 25 S =8 W=8 i VG _B VGB GN D: G G ND:G G ND :G G ND : G G ND: G 100 pF 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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